蔡月飛博士于2022年7月加入南方科技大學(xué)電子與電氣工程系,，主要從事寬禁帶半導(dǎo)體的研究,，包括氮化鎵電子器件和光電子器件的設(shè)計(jì)、制備,、表征和單片集成,。目前已在化合物半導(dǎo)體領(lǐng)域的頂級(jí)國(guó)際會(huì)議IWN，ICNS和CSW上做口頭報(bào)告3次,，在ACS Nano, ACS Photonics, IEEE EDL, APL等高水平期刊上發(fā)表論文20余篇,，其成果得到了國(guó)際知名科技媒體IEEE Spectrum, Semiconductor Today和Compound Semiconductor的專題報(bào)道, 也獲得了內(nèi)外同行的高度評(píng)價(jià),。此外還擔(dān)任Photonics Research、Nature Electronics等期刊的審稿人,，是IEEE高級(jí)會(huì)員,、Optica會(huì)員。
教育經(jīng)歷
2013.09-2018.06 香港科技大學(xué),，電子與計(jì)算機(jī)工程系,，工學(xué)博士
2011.09-2013.07 哈爾濱工業(yè)大學(xué)，物理電子學(xué),，工學(xué)碩士
2007.09-2011.07 哈爾濱工業(yè)大學(xué),，電子科學(xué)與技術(shù)，工學(xué)學(xué)士
工作經(jīng)歷
2022.07- 至今 南方科技大學(xué),，電子與電氣工程系,，助理教授
2021.09-2022.07 嘉庚創(chuàng)新實(shí)驗(yàn)室，廈門市未來(lái)顯示技術(shù)研究院,，副研究員
2018.03-2021.06 英國(guó)謝菲爾德大學(xué),，電子與電氣工程系，博士后副研究員
研究簡(jiǎn)介
寬禁帶半導(dǎo)體器件
氮化鎵HEMT和LED的集成
氮化鎵新型聲光電器件
氮化鎵光電融合芯片
代表文章
1. Y. Cai*, K. Wu, Z. Ma, S. Zhao and Y. Zhang *, "Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-band", Optics Express, 31 (26): 42795- 42806 (2023).
2. Y. Cai, C. Zhu, W. Zhong, P. Feng, S. Jiang and T. Wang*, "Monolithically integrated μLEDs/HEMTs microdisplay on a single chip by a direct epitaxial approach", Advanced Materials Technologies, vol.6, no.6, 2100214(2021). (Featured in Compound Semiconductor and LEDInside )
3. Y. Cai, J. I. Haggar, C. Zhu, P. Feng, J. Bai and T. Wang, "Direct epitaxial approach to achieve a monolithic on-chip integration of a HEMT and a single Micro-LED with a high modulation bandwidth", ACS Applied Electronic Materials, vol.3, no.1, pp.445-450 (2021).
4. J. Bai, Y. Cai, P. Feng, P. Fletcher, C. Zhu, Y. Tian, and T. Wang*, "Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width", ACS Nano, vol. 14, no. 6, pp.6906- 6911 (2020). (Featured in Compound Semiconductor)
5. Y. Cai, S. Shen, C. Zhu, X. Zhao, J.Bai and T. Wang, "Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon," ACS Applied Materials & Interfaces, vol. 12, no. 22, pp.25031-25036 (2020).
6. S. Jiang#, Y. Cai#, P. Feng, S. Shen, X. Zhao, P. Flecher, V. Esendag, K. B. Lee and T. Wang*, "Exploring an approach towards the intrinsic limits of GaN electronics," ACS Applied Materials & Interfaces, vol. 12, no. 11, pp.12949-12954 (2020). (#: Co-author with equal contributions)
7. Y. Cai, Y. Gong, J. Bai, X. Yu, C. Zhu, V. Esendag and T. Wang*, "Controllable uniform green light emitters enabled by circular HEMT-LED devices," IEEE Photonics Journal, vol. 10, no. 5, pp.1-7 (2018).
8. Y. Cai, X. Zou, C. Liu, and K. M. Lau*, "Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters," IEEE Electron Device Letters, vol. 39, no.2, pp. 224-227 (2018). (Featured in IEEE Spectrum)
9. Y. Cai, X. Zou, Y. Gao, L. Li, P. K. T. Mok, and K. M. Lau*, "Low-flicker lighting from high-voltage LEDs driven by a single converter-free driver," IEEE Photonics Technology Letters, vol. 29, no.19, pp. 1675-1678 (2017).
10. C. Liu#, Y. F. Cai#, Z. J. Liu, J. Ma, and K. M. Lau*, "Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors," Applied Physics Letters, vol. 106, no.18, pp.181110 (2015). (#: Co-author with equal contributions) (Featured in Semiconductor Today)
