師資
個(gè)人簡(jiǎn)介
丁孫安博士，畢業(yè)于清華大學(xué)電子工程系,。專(zhuān)注半導(dǎo)體與微電子領(lǐng)域研發(fā)工作30年,，先后在中科院半導(dǎo)體所,、德國(guó)馬普學(xué)會(huì),、日本廣島大學(xué)、美國(guó)朗訊科技與英特爾公司,、中科院蘇州納米所積累了豐富的專(zhuān)業(yè)教學(xué),、科學(xué)研究、技術(shù)開(kāi)發(fā),、工程建設(shè)等方面的經(jīng)驗(yàn),。研究方向涵蓋硅基器件及大規(guī)模集成電路，化合物半導(dǎo)體光電器件,，寬禁帶新型半導(dǎo)體材料等,；技術(shù)上精通納米材料的各種高精表征測(cè)試，器件工藝開(kāi)發(fā)及失效分析等,；工程上擅長(zhǎng)大型實(shí)驗(yàn)室和先進(jìn)研發(fā)平臺(tái)的規(guī)劃,、設(shè)計(jì)、建設(shè)與管理,。在國(guó)際高水平刊物上發(fā)表60多篇學(xué)術(shù)論文,，并擁有近20項(xiàng)發(fā)明專(zhuān)利。
招聘信息
丁孫安博士課題組常年招聘博士后,、科研助理,，招收博士生、碩士生,、本科實(shí)習(xí)生,，有意應(yīng)聘者請(qǐng)將簡(jiǎn)歷（格式PDF）發(fā)送至以下郵箱，以“招聘崗位_應(yīng)聘者姓名”為題,。
聯(lián)系方式：[email protected]
教育經(jīng)歷
1992年,，中國(guó)科學(xué)院半導(dǎo)體研究所，博士學(xué)位
1988年,，清華大學(xué),，碩士學(xué)位
1986年，清華大學(xué),，學(xué)士學(xué)位
工作經(jīng)歷
2021年5月至今,，南方科技大學(xué)，研究教授
2014年11月至2021年5月,，中科院蘇州納米所,，研究員
2005年3月至2014年11月,，美國(guó)英特爾公司，高級(jí)工程師,、經(jīng)理
2000年5月至2005年3月,，美國(guó)朗訊科技公司，研究工程師
1998年4月至2000年5月,，美國(guó)緬因大學(xué),，訪(fǎng)問(wèn)科學(xué)家
1997年4月至1998年4月，日本廣島大學(xué),，研究教授
1994年6月至1996年11月,，德國(guó)馬普學(xué)會(huì)，博士后
1992年7月至1994年6月,，中科院半導(dǎo)體研究所,，助理研究員
獲得獎(jiǎng)項(xiàng)
? 2017年 蘇州市高層次短缺優(yōu)秀人才
? 2016年 江蘇省“雙創(chuàng)”團(tuán)隊(duì)領(lǐng)軍人才；
? 2016年 蘇州工業(yè)園區(qū)高層次領(lǐng)軍人才
? 2015年 江蘇省“雙創(chuàng)”個(gè)人領(lǐng)軍,；
? 2014年 蘇州工業(yè)園區(qū)國(guó)際型科教領(lǐng)軍人才
? 2010年英特爾全球獎(jiǎng)獲得者,，
? 1997年中國(guó)科學(xué)院科學(xué)技術(shù)成果獎(jiǎng)，二等獎(jiǎng)
研究方向
集成電路先進(jìn)材料與工藝開(kāi)發(fā)
寬禁帶及超寬禁帶半導(dǎo)體材料與器件研發(fā)
表面科學(xué)分析與異質(zhì)界面調(diào)控
薄膜材料與半導(dǎo)體器件表征分析
代表性論文
1. Direct Observation of One-Dimensional Peierls-type Charge Density Wave in Twin Boundaries of Monolayer MoTe2. Wang, Y. Wu, Y. Yu, A. Chen, H. Li, W. Ren, S. Lu, S. Ding*, H. Yang, Q.K. Xue, F.S. Li*, G. Wang*, ACS Nano, 14 (2020) 8299-8306.
2. Large-cale quantification of aluminum in AlxGa1‐xN alloys by ToF-SIMS: The benefit of secondary cluster ions. ong Huang, Sunan Ding*, Hui Yang, , Surf Interface Anal., 52 (2020) 311-317.
3. Anisotropy and in-plane polarization of low-symmetrical β-Ga2O3 single crystal in the deep ultraviolet band. Mu, X. Chen, G. He, Z. Jia, J. Ye, B. Fu, J. Zhang, S. Ding, X. Tao, , Applied Surface Science, 527 (2020) 146648.
4. Long-Wavelength InAs/GaSb Superlattice Detectors on InAs Substrates With n-on-p Polarity. J.F. Liu, Y. Teng, X.J. Hao, Y. Zhao, Q.H. Wu, X. Li, H. Zhu, Y. Chen, R. Huang, S. Ding, Y. Huang, , IEEE Journal of Quantum Electronics, 56 (2020) 6.
5. The Significant Effect of Carbon and Oxygen Contaminants at Pd/p‐GaN Interface on Its Ohmic Contact Characteristics. Z. Li, R. Huang, X. Chen, H. Wang, B. Feng, G. He, Z. Huang, F. Li, J. Liu*, L. Zhang, T. Liu, S. Ding*, , Phys. Status Solidi A, 218 (2020) 2000603.
6. Interdigital Structure Enhanced the Current Spreading and Light Output Power of GaN-Based Light Emitting Diodes. J. Ding*, L.J. Che, X. Chen, T. Zhang, Y.D. Huang, Z.L. Huang, Z.M. Zeng, H.L. Zhang, S. Ding*, H. Yang, , IEEE Access, 8 (2020) 105972-105979.
7. Investigation of β-Ga2O3 film growth mechanism on c-plane sapphire substrate by ozone molecular beam epitaxy. Boyuan Feng, Zhengcheng Li, Feiyu Cheng, Leilei Xu, Tong Liu, Zengli Huang, Fangsen Li, Jiagui Feng, Xiao Chen, Ying Wu, Gaohang He* and Sunan Ding*, , Physica Status Solidi A 2020, 2000457
8. The abnormal aging phenomena in GaN-based near-ultraviolet laser diodes. Jin Wang, Meixin Feng*, Rui Zhou, Qian Sun*, Jianxun Liu, Yingnan Huang, Yu Zhou, Hongwei Gao, Xinhe Zheng*, Masao Ikeda, Rong Huang, Fangsen Li, An DingSun; Hui Yang;, Appl. Phys. 52 (2019) 275104 (5pp)
9. INTERFACE ANALYSIS OF TIN/N-GAN OHMIC CONTACTS WITH HIGH THERMAL STABILITY. Yafeng Zhuab,Rong Huanga,Zhengcheng Lia,Hui Haoa,Yuxin Ana,Tong Liua,Yanfei Zhaoa,Yang Shena,Yun Guob,Fangsen Lia,SunanDinga, Applied Surface Science 2019, 481, 1148-1153
10. STABLE ADSORPTION OF SINGLE GOLD ATOMS ON THE SrTiO3(111)-(9 × 9) RECONSTRUCTED SURFACE. Jiagui Feng,,? Sunan Ding,? and Jiandong Guo? . J. Phys. Chem. C 2019,123, 4866-4870.
11. REMOTE PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF GALIUM OXIDE THIN FILMS WITH NH3 PLASMA PRETREATMENT. H. Hao?, X. Chen?, Z.C. Li, Y. Shen, H. Wang, Y.F. Zhao, R. Huang, T. Liu, J. Liang, Y.X. An, Q. Peng, S.A. Ding*, J. of Semiconductors, 2019 Vol. 40, 012860
12. ION SPUTTER INDUCED INTERFACIAL REACION IN PROTOTYPICAL METAL-GaN SYSTEM. Huang, R.; Li, F *.; Liu, T.; Zhao, Y.; Zhu, Y.; Shen, Y.; Lu, X.; Huang, Z.; Liu, J.; Zhang, L.; Zhang, S.; Li, Z.; Dingsun, A. *; Yang, H., Sci. Rep. 2018, 8 (1), 8521.
13. ANGULAR DEPENDENT XPS STUDY OF SURFACE BAND BENDING ON Ga-POLAR n-GaN GaN. Huang, R.; Liu, T.; Zhao, Y.; Zhu, Y.; Huang, Z.; Li, F.*; Liu, J.; Zhang, L.; Zhang, S.; Dingsun, A.*; Yang, H., Appl. Surf. Sci. 2018, 440, 637-642.
14. STUDY ON THE MEASUREMENT ACCURACY OF CIRCULAR TRANSMISSION LINE MODEL FOR LOW-RESISTANCE OHMIC CONTACTS ON III-V WIDE BAND-GAP SEMICONDUCTORS. T. Liu, R. Huang, F. Li, Z. Huang, J. Zhang, J. Liu, L. Zhang, S. Zhang, A. Dingsun*,，H. Yang, Current Applied Physics 2018, 18 (7), 853-858.
15. REMOTE PLASMA-ENHANCED ATOMIC LAYER DEPOSITION OF METALLIC TiN FILMS WITH LOW WORK FUNCTION AND HIGH UNIFORMITY, Y. Zhu, F. Li, R. Huang, T. Liu, Y. Zhao, Y. Shen, J. Zhang, A. Dingsun*,，Y. Guo, J. Vac. Sci. & Tech. A 2018, 36 (4), 041501.
16. CONTROLLABLE PROCESS OF NANOSTRUCTURED GaN BY MASKLESS INDUCTIVELY COUPLED PLASMA (ICP) ETCHING，Zhao, Yanfei; Wang, Hu; Zhang, Wei; Li, Jiadong; Shen, Yang; Zhang, Jian*; Dingsun, An*,Journal of Micromech. and Microengin., Article reference: JMM-103132
17. THERMAL STABILITY STUDY OF GaP/HIGH-k DIELECTRICS INTERFACES, Xinglu Wang, Yanfei Zhao, Rong Huang, Fangsen Li, Xiaoming Lu, Yang Shen, Hu Wang, Dawei Shao, Baimei Tan, Jian Zhang, Xinjian Xie, An Dingsun*, and Hong Dong*,，Advanced Materials Interface (Published online. DOI: 10.1002/admi.2017 00609)
18. p-GaN GATE ENHANCEMENT-MODE HEMT THROUGH A HIGH TOLERANCE SELF-TERMINATED ETCHING PROCESS, Y. Zhou, Y. Zhong, H. Gao, S. Dai, J. He, M. Feng, Y. Zhao, Q. Sun, An DingSun, and H. Yang, IEEE Journal of the Electron Devices Society (2017, VOLUME 5, NO. 5, SEPTEMBER 2017).
19. THE GROWTH OF THE METALLIC ZrNx THIN FILMS ON p-GaN SUBSTRATE BY PULSED LASER DEPOSITION，Chengyan Gu; Zhanpeng Sui; Yuxiong Li; Haoyu Chu; Sunan Ding; Yanfei Zhao,，Chunping Jiang,，Applied Surface Science 433, 306 (2017).
20. SELF-TERMINATED ETCHING OF GAN WITH A HIGH SELECTIVITY OVER ALGAN UNDER INDUCTIVELY COUPLED CL2/N2/O2 PLASMA WITH A LOW-ENERGY ION BOMBARDMENT, Yaozong Zhong, Yu Zhou*, Hongwei Gao, Shujun Dai, Junlei He, Meixin Feng, Qian Sun*, Jijun Zhang, Yanfei Zhao, An DingSun, Hui Yang, Applied surface science 420, 817 (2017).
21. NEW TECHNOLOGIES AND CHALLENGES IN CHARACTERIZATION OF III-V EPITAXY COMPOUNDS Sunan Ding Invited talk in the 11th Annual Wireless and Optical Communications Conference, Newark, NJ, April 26-27, 2002
22. STOICHIOMETRY AND MICROSTRUCTURE EFFECTS ON TUNGSTEN OXIDE CHEMIRESISTIVE FILMS S. C. Moulzolf, S. A. Ding, R. J. Lad, Sens. Actuators, B (2001), B77(1-2), 375-382.
23. IN-SITU STRUCTURAL, CHEMICAL, AND ELECTRICAL CHARACTERIZATION OF WO3 SENSOR THIN FILMS S. A. Ding, C. Kim, and R. J. Lad, Presented at 46th International Symposium of the American Vacuum Society, Seattle, Oct. 25-29, 1999.
24. QUANTUM CONFINEMENT EFFECT IN SELF-ASSEMBLED, NANOMETER SILICON DOTS S. A. Ding, M. Ikeda, S. Miyazaki, and M. Hirose, Appl. Phys. Letts. 73, (1998), 3881.
25. ELECTRONIC BAND STRUCTURE OF ZINC BLENDE S. R. Barman, S. A. Ding, G. Neuhold, D. Wolfframm, D. A. Evans, and K. Horn, Phys. Rev. B, 58, (1998), 7053.
26. VALENCE-BAND DISCONTINUITY AT A CUBIC GaN/GaAs HETEROJUNCTION MEASURED BY SYNCHROTRON-RADIATION PHOTOEMISSION SPECTROSCOPY S. A. Ding, S. R. Barman, K. Horn, H. Yang, B. Yang, O. Brandt and K. Ploog Appl. Phys. Letts. 70, (1997), 2407.
27. A NEW STRUCTURE OF In-BASED OHMIC CONTACTS TO n-TYPE GaAs S. A. Ding and C. C. Hsu, Appl. Phys. A 62, (1996), 241-245.
28. ELECTRONIC STRUCTURE OF WURTZITE-GaN STUDIED BY PHOTOELECTRON SPECTROSCOPY S. A. Ding, S. R. Barman, V. L. Alperovich, K. Horn Presented at the 23rd Intern. Conf. on the Physics of Semiconductor, Berlin, July 21-26, 1996.
29. EVIDENCE OF MOTT-HOBBARD AND BIPOLARONIC BEHAVIOR IN PHOTOEMISSION SPECTRA OF ALKALI METAL/GaAs(110) INTERFACES. V. L. Alperovich, S. A. Ding, S. R. Barman, K. Horn Presented at the 23rd Intern. Conf. on the Physics of Semiconductor, Berlin, July 21-26, 1996.
30. ELECTRONIC STRUCTURE OF CUBIC GALLIUM NITRIDE FILMS GROWN ON GaAs(100) S. A. Ding, G. Neuhold, J. H. Weaver, P. Haeberle and K. Horn J. Vac. Sci. Technol. A14(3), (1996), 819.
31. RECENT DEVELOPMENTS IN OHMIC CONTACT FOR III-V COMPOUNDS SEMICONDUCTORS (Review Article) C. C. Hsu and S. A. Ding Chinese J. Vac. Sci. and Technol., vol.14, No.2 (1994).
32. EFFECTS OF DEEP CENTERS AT PtSi/Si INTERFACES AND HYDROGENATION C. C. Hsu and S. A. Ding Appl. Surface Science, 70/71, (1993), 438.
33. THE ADSORPTION OF OXYGEN ON FeSi SURFACES S. A. Ding, M. S. Ma, J. X. Wu, and C. C. Hsu, Surface Science, 267/270, (1992), 1022.
34. ELECTRONIC PROPERTIES OF THE Cr-Si(111) INTERFACES C. C. Hsu, B. Q. Li and S. A. Ding Vacuum Vol.41, (1990), 690.